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october 2006 rev 5 1/14 14 STW12NK90Z n-channel 900v - 0.72 ? - 11a - to-247 zener-protected supermesh? power mosfet general features extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufact uring repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip-based powermesh? layout. in addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. such series complements st full range of high voltage mosfets including revolutionary mdmesh? products. applications switching application internal schematic diagram type v dss r ds(on) i d p w STW12NK90Z 900v <0.88 ? 11a 230w to-247 www.st.com order codes part number marking package packaging STW12NK90Z w12nk90z to-247 tube
contents STW12NK90Z 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STW12NK90Z electrical ratings 3/14 1 electrical ratings table 1. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 900 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 11 a i d drain current (continuous) at t c = 100c 7 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 44 a p tot total dissipation at t c = 25c 230 w derating factor 1.85 w/c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 6000 v e as (2) 2. i sd 11a, di/dt 200a/s, v dd v (br)dss , t j t jmax. single pulse avalanche energy 4.5 mj t stg storage temperature -55 to 150 c t j max. operating junction temperature table 2. thermal data rthj-case thermal resistance junction-case max 0.54 c/w rthj-amb thermal resistance junction-ambient max 50 c/w t j maximum lead temperature for soldering purpose 300 c table 3. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 500 mj table 4. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
electrical ratings STW12NK90Z 4/14 1.1 protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components.
STW12NK90Z electrical characteristics 5/14 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1ma, v gs =0 900 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs = 10v, i d = 5.5a 0.72 0.88 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. forward transconductance v ds = 15v , i d =5.5a 11 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1mhz, v gs = 0 3500 280 58 pf pf pf c oss eq (2) 2. coss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . equivalent output capacitance v gs = 0v, v ds = 0v to 800v 117 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 450v, i d = 5a r g =4.7 ? v gs = 10v (see figure 13 ) 31 20 88 55 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 720v, i d = 10a, v gs = 10v, r g =4.7 ? (see figure 14 ) 113 19 60 152 nc nc nc
electrical characteristics STW12NK90Z 6/14 table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 11 44 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5 % forward on voltage i sd = 11a, v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10a, di/dt = 100a/s, v dd = 50v, t j = 25c (see figure 15 ) 728 7.8 21.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10a, di/dt = 100a/s, v dd = 50v, t j = 150c (see figure 15 ) 964 11 23 ns c a
STW12NK90Z electrical characteristics 7/14 2.1 electrical characteristi cs (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. transconductance figure 6. static drain-source on resistance
electrical characteristics STW12NK90Z 8/14 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics figure 12. normalized breakdown voltage vs temperature
STW12NK90Z test circuit 9/14 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit
test circuit STW12NK90Z 10/14 figure 17. unclamped inductive wavefo rm figure 18. switching time waveform
STW12NK90Z package mechanical data 11/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data STW12NK90Z 12/14 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data
STW12NK90Z revision history 13/14 5 revision history table 8. revision history date revision changes 21-jun-2004 4 complete version 17-oct-2006 5 new template, no content change
STW12NK90Z 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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